SG50AA80 διπλής κατεύθυνσης scr triac 800V

Symbol

Item

Unit

SG50AA80

SG50AA120

SG50AA160

VDRM

Repetitive Peak Off-State Voltage

800

1200

1600

V

Symbol

Item

Conditions

Ratings

Unit

IT(RMS)

R.M.S. On-State Current

Tc=58℃

50

A

ITSM

Surge On-State Current

One cycle, 50Hz/60Hz, peak, non-repetitive

450

A

I2t

I2t

Value for one cycle of surge current

730

A2S

PGM

Peak Gate Power Dissipation

10

W

PG(AV)

Average Gate Power Dissipation

1

W

IGM

Peak Gate Current

3

A

VGM

Peak Gate Voltage

10

V

di/dt

Critical Rate of Rise of On-State Current

IG=100mA,Tj=25℃,VD=1/2VDRM,

100

A/μs

Tj

Operating Junction Temperature

-25 to +125

℃

Tstg

Storage Temperature

-40 to +125

℃

Mounting Torque(M4)

Recommended Value 1.0-1.4(10-14)

1.5(15)

N.m

Mass

Typical value

2

g

Symbol

Item

Conditions

Ratings

Unit

IDRM

Reptitive  Peak  Off-State  Current,

max

VD=VDRM, Single phase, half wave, Tj=125℃

5

mA

VTM

Peak On-State Voltage, max

On-State Current [√ 2 × IT ( RMS )], Inst.

measurement

1.4

V

I + GT1

1

Gate Trigger Current, max

Tj=25℃,IT=1A,VD=6V

80

mA

I -GT1

2

Tj=25℃,IT=1A,VD=6V

80

I + GT3

3

-

I -GT3

4

Tj=25℃,IT=1A,VD=6V

80

V+ GT1

1

Gate Trigger Voltage, max

Tj=25℃,IT=1A,VD=6V

3

V

V-GT1

2

Tj=25℃,IT=1A,VD=6V

3

V+ GT3

3

-

V-GT3

4

Tj=25℃,IT=1A,VD=6V

3

VGD

Non-Trigger Gate Voltage, min

Tj=125℃,VD=1/2VDRM

0.2

V

tgt

Turn On Time, max.

IT(RMS),IG=100mA,VD=1/2VDRM,Tj

=25℃,dIG/dt=1A/μs

10

V

dv/dt

Critical   Rate   of   Rise   on-State

Voltage,min.

Tj=125℃,VD=2/3VDRM,Exoponential wave.

300

V/μs

dv/dt]c

Critical   Rate   of   Rise   off-State

Voltage at commutation, min

Tj=125℃,VD=2/3VDRM,[di/dt]c=15A/ms

200

V/μs

IH

Holding Current, typ.

Tj=25℃

30

mA

Rth(j-c)

Thermal Impedance, max

Junction to case

1.5

℃/W